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US Patent Issued to Industrial Technology Research Institute on April 21 for "Semiconductor structure including insulating vacancy for improving operation performance and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,808, issued on April 21, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan). "Semiconductor structure including in... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Interconnection structure lined by isolation layer" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,809, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interconnection structure lined b... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 21 for "Semiconductor structure and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,810, issued on April 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and m... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, test structure, manufacturing method and test method" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,811, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure, test structure, ... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, fabrication method for semiconductor structure and memory" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,812, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure, fabrication meth... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on April 21 for "Interconnect structure including charged dielectric layers" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,813, issued on April 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interconnect structure including ... Read More


US Patent Issued to NANYA TECHNOLOGY on April 21 for "Electronic fuse device including fuse gate, pass gate, and doping regions" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,814, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Electronic fuse device including fuse gate, pa... Read More


US Patent Issued to TEXAS INSTRUMENTS on April 21 for "Bond wire reliability and process with high thermal performance in small outline package" (California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,815, issued on April 21, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Bond wire reliability and process with high thermal performance... Read More


US Patent Issued to DOWA METALTECH on April 21 for "Insulating substrate and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,816, issued on April 21, was assigned to DOWA METALTECH Co. LTD. (Tokyo). "Insulating substrate and manufacturing method thereof" was inve... Read More


US Patent Issued to Intel on April 21 for "Metal matrix composite layers for heat dissipation from integrated circuit devices" (American, Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,817, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Metal matrix composite layers for heat dissipation from integ... Read More